2SD1223(TE16L1,NQ) - Toshiba Semiconductor & Storage

Attributes

NAME	TYPE
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	4A
Voltage - Collector Emitter Breakdown (Max)	80V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 6mA, 3A
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 3A, 2V
Power - Max	1W
Frequency - Transition	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	PW-MOLD
Tags	2SD122 2SD12 2SD1 2SD

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