2SC2235-O(TE6,F,M) - Toshiba Semiconductor & Storage

Attributes

NAME	TYPE
Transistor Type	NPN
Current - Collector (Ic) (Max)	800mA
Voltage - Collector Emitter Breakdown (Max)	120V
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 100mA, 5V
Power - Max	900mW
Frequency - Transition	120MHz
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 Long Body
Supplier Device Package	LSTM
Tags	2SC223 2SC22 2SC2 2SC

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