SIHG17N60D-GE3 - Vishay/Siliconix

Mfr. #:
SIHG17N60D-GE3
Description:
MOSFET N-CH 600V 17A TO247AC
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Delivery
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Documents

NAMETYPE
DatasheetsSIHG17N60D
Video FileMOSFET Technologies for Power Conversion

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
Series-
PackagingTube
Part StatusActive
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Rds On (Max) @ Id, Vgs340 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) @ Vgs90nC @ 10V
Input Capacitance (Ciss) @ Vds1780pF @ 100V
Power - Max277.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AC

Resources

NAMETYPE
Standard Package500
TagsSIHG17 SIHG1 SIHG SIH

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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Payment

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