SI8416DB-T2-E1 - Vishay/Siliconix

Mfr. #:
SI8416DB-T2-E1
Description:
MOSFET N-CH 8V 16A MICRO
Payment
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Delivery
DHL / FedEx / Ups / TNT / EMS
 
Buy SI8416DB-T2-E1

Documents

NAMETYPE
DatasheetsSI8416DB
Video FileMOSFET Technologies for Power Conversion

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingTape & Reel (TR)
Part StatusActive
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Rds On (Max) @ Id, Vgs23 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) @ Vgs26nC @ 4.5V
Input Capacitance (Ciss) @ Vds1470pF @ 4V
Power - Max13W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UFBGA
Supplier Device Package6-Micro Foot™

Resources

NAMETYPE
Standard Package3,000
TagsSI8416 SI841 SI8 SI84

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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Payment

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