2SA2120-O(Q) - Toshiba Semiconductor & Storage

Attributes

NAME	TYPE
Transistor Type	PNP
Current - Collector (Ic) (Max)	12A
Voltage - Collector Emitter Breakdown (Max)	200V
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V
Power - Max	200W
Frequency - Transition	25MHz
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)
Tags	2SA212 2SA21 2SA2 2SA

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