Mfr. #:
IXFR12N100Q
Description:
MOSFET N-CH 1000V 10A ISOPLUS247
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Documents

NAMETYPE
DatasheetsIXFR12N100Q, IXFR10N100Q

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerIXYS
SeriesHiPerFET™
PackagingTube
Part StatusActive
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Rds On (Max) @ Id, Vgs1.1 Ohm @ 6A, 10V
Vgs(th) (Max) @ Id5.5V @ 4mA
Gate Charge (Qg) @ Vgs90nC @ 10V
Input Capacitance (Ciss) @ Vds2900pF @ 25V
Power - Max250W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseISOPLUS247™
Supplier Device PackageISOPLUS247™

Resources

NAMETYPE
Standard Package30
TagsIXFR12N10 IXFR12N IXFR12 IXFR1 IXFR IXF

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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