IXFA5N100P - IXYS Corporation

Mfr. #:
IXFA5N100P
Description:
MOSFET N-CH 1000V 5A TO-263
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Documents

NAMETYPE
DatasheetsIXFx5N100P

Attributes

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CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
PackagingTube
Part StatusActive
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Rds On (Max) @ Id, Vgs2.8 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id6V @ 250µA
Gate Charge (Qg) @ Vgs33.4nC @ 10V
Input Capacitance (Ciss) @ Vds1830pF @ 25V
Power - Max250W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263 (IXFA)

Resources

NAMETYPE
Standard Package50
TagsIXFA5 IXFA IXF

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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