BSP315P-E6327 - Infineon Technologies

Documents

NAME	TYPE
Datasheets	BSP315P
PCN Obsolescence/ EOL	Multiple Devices 28/Mar/2008

NAME	TYPE
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
Series	SIPMOS®
Packaging	Tape & Reel (TR)
Part Status	Obsolete
FET Type	MOSFET P-Channel, Metal Oxide
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	1.17A (Ta)
Rds On (Max) @ Id, Vgs	800 mOhm @ 1.17A, 10V
Vgs(th) (Max) @ Id	2V @ 160µA
Gate Charge (Qg) @ Vgs	7.8nC @ 10V
Input Capacitance (Ciss) @ Vds	160pF @ 25V
Power - Max	1.8W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	PG-SOT223-4

Part Number	Description
BSP315P-E6327	MOSFET P-CH 60V 1.17A SOT-223

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