GP1M008A025FG - Global Power Technologies Group

Mfr. #:
GP1M008A025FG
Description:
MOSFET N-CH 250V 8A TO220F
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Documents

NAMETYPE
DatasheetsGP1M008A025FG, HG

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerGlobal Power Technologies Group
Series-
PackagingTape & Reel (TR)
Part StatusActive
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Rds On (Max) @ Id, Vgs600 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) @ Vgs8.4nC @ 10V
Input Capacitance (Ciss) @ Vds423pF @ 25V
Power - Max17.3W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220F

Resources

NAMETYPE
Standard Package2,000
TagsGP1M008A02 GP1M008 GP1M00 GP1M GP1

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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Payment

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