SI3447CDV-T1-GE3 - Vishay/Siliconix

Mfr. #:
SI3447CDV-T1-GE3
Description:
MOSFET P-CH 12V 7.8A 6-TSOP
Payment
T/T / Paypal / Visa / MoneyGram / Western / Union
Delivery
DHL / FedEx / Ups / TNT / EMS
 
Buy SI3447CDV-T1-GE3

Attributes

NAMETYPE
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C7.8A (Tc)
Rds On (Max) @ Id, Vgs36 mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) @ Vgs30nC @ 8V
Input Capacitance (Ciss) @ Vds910pF @ 6V
Power - Max3W
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP
TagsSI3447C SI3447 SI344 SI34 SI3

Package

Part NumberDescription
SI3447CDV-T1-GE3MOSFET P-CH 12V 7.8A 6-TSOP
SI3447CDV-T1-GE3MOSFET P-CH 12V 7.8A 6-TSOP

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Payment

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