SI2331DS-T1-GE3 - Vishay/Siliconix

Mfr. #:
SI2331DS-T1-GE3
Description:
MOSFET P-CH 12V 3.2A SOT23-3
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Delivery
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Documents

NAMETYPE
DatasheetsSI2331DS
Video FileMOSFET Technologies for Power Conversion

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingTape & Reel (TR)
Part StatusObsolete
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Rds On (Max) @ Id, Vgs48 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) @ Vgs14nC @ 4.5V
Input Capacitance (Ciss) @ Vds780pF @ 6V
Power - Max710mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)

Resources

NAMETYPE
Standard Package3,000
TagsSI2331 SI233 SI23 SI2

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