2SK3669(TE16L1,NQ) - Toshiba Semiconductor & Storage

Mfr. #:
2SK3669(TE16L1,NQ)
Description:
MOSFET N-CH 100V 10A PW-MOLD
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Delivery
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Buy 2SK3669(TE16L1,NQ)

Attributes

NAMETYPE
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Rds On (Max) @ Id, Vgs125 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) @ Vgs8nC @ 10V
Input Capacitance (Ciss) @ Vds480pF @ 10V
Power - Max20W
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePW-MOLD
Tags2SK36 2SK3 2SK

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