Mfr. #:
QJD1210SA1
Description:
MOSFET 2N-CH 1200V 100A SIC
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Documents

NAMETYPE
DatasheetsQJD1210SA1 Preliminary Datasheet
Next Generation Power Semiconductors Brief

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Arrays
ManufacturerPowerex Inc.
Series-
PackagingBulk
Part StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C100A
Rds On (Max) @ Id, Vgs17 mOhm @ 100A, 15V
Vgs(th) (Max) @ Id1.6V @ 34mA
Gate Charge (Qg) @ Vgs330nC @ 15V
Input Capacitance (Ciss) @ Vds8200pF @ 10V
Power - Max520W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

Resources

NAMETYPE
Standard Package1
TagsQJD1210SA QJD1210S QJD

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (Package Tracking) (It may take up to 24 hours before carriers display the info.)

Payment

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  • If you need the detailed invoice or tax ID, please email us.