APTM10DHM09T3G - Microsemi Power Products

Mfr. #:
APTM10DHM09T3G
Description:
MOSFET 2N-CH 100V 139A SP3
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Delivery
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Documents

NAMETYPE
DatasheetsAPTM10DHM09T3G

Attributes

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CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Arrays
ManufacturerMicrosemi Corporation
SeriesPOWER MOS V®
PackagingBulk
Part StatusActive
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C139A
Rds On (Max) @ Id, Vgs10 mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id4V @ 2.5mA
Gate Charge (Qg) @ Vgs350nC @ 10V
Input Capacitance (Ciss) @ Vds9875pF @ 25V
Power - Max390W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP3
Supplier Device PackageSP3

Resources

NAMETYPE
Standard Package1
TagsAPTM10DHM09 APTM10DH APTM10D APTM10 APTM1 APTM APT

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (Package Tracking) (It may take up to 24 hours before carriers display the info.)

Payment

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