IXTA1R4N100P - IXYS Corporation

Mfr. #:
IXTA1R4N100P
Description:
MOSFET N-CH 1000V 1.4A TO-263
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Documents

NAMETYPE
DatasheetsIXT(A,P,Y)1R4N100P

Attributes

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CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerIXYS
SeriesPolar™
PackagingTube
Part StatusActive
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Rds On (Max) @ Id, Vgs11 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) @ Vgs17.8nC @ 10V
Input Capacitance (Ciss) @ Vds450pF @ 25V
Power - Max63W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263 (IXTA)

Resources

NAMETYPE
Standard Package50
TagsIXTA1R4 IXTA1R IXTA1 IXTA IXT

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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