GA50JT06-258 - GeneSiC Semiconductor

Mfr. #:
GA50JT06-258
Description:
TRANS SJT 600V 100A
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Buy GA50JT06-258

Documents

NAMETYPE
DatasheetsGA50JT06-258
Online CatalogSilicon Carbide (SiC) Super Junction FETs

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerGeneSiC Semiconductor
Series-
PackagingBulk
Part StatusActive
FET TypeJunction Transistor, Normally Off
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs25 mOhm @ 50A
Vgs(th) (Max) @ Id-
Gate Charge (Qg) @ Vgs-
Input Capacitance (Ciss) @ Vds-
Power - Max769W
Operating Temperature-55°C ~ 225°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-258-3, TO-258AA
Supplier Device PackageTO-258

Resources

NAMETYPE
Standard Package10
Other Names1242-1253
TagsGA50J GA50 GA5

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