EPC2020ENGR - EPC

Documents

NAME	TYPE
Datasheets	EPC2020 Datasheet Preliminary
Mfg Application Notes	Fourth Generation eGaN® FETs Assembling eGaN® FETs Die Attach Procedure Die Removal Procedure Using eGaN® FETs
Product Training Modules	eGaN-based Eighth Brick Converter
Featured Product	Gen 4 eGaN FETs
Online Catalog	N-Channel Standard FETs

NAME	TYPE
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Manufacturer	EPC
Series	eGaN®
Packaging	Tape & Reel (TR)
Part Status	Not Available
FET Type	GaNFET N-Channel, Gallium Nitride
FET Feature	Standard
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	60A (Ta)
Rds On (Max) @ Id, Vgs	2.2 mOhm @ 31A, 5V
Vgs(th) (Max) @ Id	2.5V @ 16mA
Gate Charge (Qg) @ Vgs	16nC @ 5V
Input Capacitance (Ciss) @ Vds	1800pF @ 30V
Power - Max	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

Part Number	Description
EPC2020ENGR	TRANS GAN 60V 60A BUMPED DIE
EPC2020ENGR	TRANS GAN 60V 60A BUMPED DIE

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