SI1305EDL-T1-GE3 - Vishay/Siliconix

Mfr. #:
SI1305EDL-T1-GE3
Description:
MOSFET P-CH 8V 0.86A SOT323-3
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Documents

NAMETYPE
DatasheetsSI1305EDL
Video FileMOSFET Technologies for Power Conversion

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
Series-
PackagingTape & Reel (TR)
Part StatusObsolete
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C860mA (Ta)
Rds On (Max) @ Id, Vgs280 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) @ Vgs4nC @ 4.5V
Input Capacitance (Ciss) @ Vds-
Power - Max290mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSC-70-3

Resources

NAMETYPE
Standard Package3,000
TagsSI1305E SI1305 SI130 SI13 SI1

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