2SK2884(SM,Q) - Toshiba Semiconductor & Storage

Attributes

NAME	TYPE
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Rds On (Max) @ Id, Vgs	2.2 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) @ Vgs	34nC @ 10V
Input Capacitance (Ciss) @ Vds	1080pF @ 25V
Power - Max	100W
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-220SM
Tags	2SK2884 2SK288 2SK28 2SK2 2SK

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