2SA1972(TE6,F,M) - Toshiba Semiconductor & Storage

Attributes

NAME	TYPE
Transistor Type	PNP
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	400V
Vce Saturation (Max) @ Ib, Ic	1V @ 10mA, 100mA
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	140 @ 20mA, 5V
Power - Max	900mW
Frequency - Transition	35MHz
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 Long Body
Supplier Device Package	LSTM
Tags	2SA197 2SA19 2SA1 2SA

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