Mfr. #:
1N8031-GA
Description:
Diode Silicon Carbide Schottky 650V 1A Through Hole TO-276
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Delivery
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Documents

NAMETYPE
Datasheets1N8031-GA
Design Resources1N8031-GA Spice Model
Online CatalogSilicon Carbide Power Schottky Diode

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyDiodes - Rectifiers - Single
ManufacturerGeneSiC Semiconductor
Series-
PackagingTube
Part StatusActive
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)650V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.5V @ 1A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0ns
Current - Reverse Leakage @ Vr5µA @ 650V
Capacitance @ Vr, F76pF @ 1V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-276AA
Supplier Device PackageTO-276
Operating Temperature - Junction-55°C ~ 250°C

Resources

NAMETYPE
Standard Package10
Other Names1242-1118
1N8031GA
Tags1N803 1N80 1N8

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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