EPC2032ENGR - EPC

Documents

NAME	TYPE
Datasheets	EPC2032 Datasheet
Mfg Application Notes	Assembling eGaN® FETs Die Attach Procedure Die Removal Procedure Using eGaN® FETs
Featured Product	EPC2030/31/32 eGaN FET

NAME	TYPE
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Manufacturer	EPC
Series	eGaN®
Packaging	Tray
Part Status	Not Available
FET Type	GaNFET N-Channel, Gallium Nitride
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	48A (Ta)
Rds On (Max) @ Id, Vgs	4 mOhm @ 30A, 5V
Vgs(th) (Max) @ Id	2.5V @ 11mA
Gate Charge (Qg) @ Vgs	15nC @ 5V
Input Capacitance (Ciss) @ Vds	1530pF @ 50V
Power - Max	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

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