SI3475DV-T1-GE3 - Vishay/Siliconix

Documents

NAME	TYPE
Datasheets	SI3475DV
Video File	MOSFET Technologies for Power Conversion
PCN Obsolescence/ EOL	SIL-1072014 Rev0 17/Dec/2014

NAME	TYPE
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Obsolete
FET Type	MOSFET P-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	950mA (Tc)
Rds On (Max) @ Id, Vgs	1.61 Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) @ Vgs	18nC @ 10V
Input Capacitance (Ciss) @ Vds	500pF @ 50V
Power - Max	3.2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	6-TSOP

Part Number	Description
SI3475DV-T1-GE3	MOSFET P-CH 200V 0.95A 6-TSOP

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