RQJ0303PGDQA#H6 - Renesas Electronics America

Mfr. #:
RQJ0303PGDQA#H6
Description:
MOSFET P-CH 30V 3.3A 3MPAK
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Delivery
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Documents

NAMETYPE
DatasheetsRQJ0303PGDQA
RoHS InformationRoHS Compliance

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerRenesas Electronics America
Series-
PackagingTape & Reel (TR)
Part StatusActive
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.3A (Ta)
Rds On (Max) @ Id, Vgs68 mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) @ Vgs12nC @ 10V
Input Capacitance (Ciss) @ Vds625pF @ 10V
Power - Max800mW
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device Package3-MPAK

Resources

NAMETYPE
Standard Package3,000

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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Payment

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