BUK9E1R8-40E,127 - NXP Semiconductors

Documents

NAME	TYPE
Datasheets	BUK9E1R8-40E

NAME	TYPE
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Manufacturer	NXP Semiconductors
Series	-
Packaging	Tube
Part Status	Quote Required
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Rds On (Max) @ Id, Vgs	1.7 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Gate Charge (Qg) @ Vgs	120nC @ 5V
Input Capacitance (Ciss) @ Vds	16400pF @ 25V
Power - Max	349W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package	I2PAK

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