FQI6N60CTU - Fairchild Semiconductor

Mfr. #:
FQI6N60CTU
Description:
MOSFET N-CH 600V 5.5A I2PAK
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Documents

NAMETYPE
DatasheetsFQB6N60C, FQI6N60C
PCN Design/SpecificationPassivation Material 26/June/2007

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerFairchild Semiconductor
SeriesQFET®
PackagingTube
Part StatusObsolete
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Rds On (Max) @ Id, Vgs2 Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs20nC @ 10V
Input Capacitance (Ciss) @ Vds810pF @ 25V
Power - Max125W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageI2PAK

Resources

NAMETYPE
Standard Package1,000
TagsFQI6 FQI

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