SI4286DY-T1-GE3 - Vishay/Siliconix

Documents

NAME	TYPE
Datasheets	Si4286DY
PCN Assembly/Origin	Multiple Fabracation Changes09/Jul/2014
Online Catalog	N-Channel Logic Level Gate FETs

NAME	TYPE
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Arrays
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	7A
Rds On (Max) @ Id, Vgs	32.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) @ Vgs	10.5nC @ 10V
Input Capacitance (Ciss) @ Vds	375pF @ 20V
Power - Max	2.9W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

Part Number	Description
SI4286DY-T1-GE3	MOSFET 2N-CH 40V 7A 8SO
SI4286DY-T1-GE3	MOSFET 2N-CH 40V 7A 8SO

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