TK10V60W,LVQ - Toshiba Semiconductor & Storage

Mfr. #:
TK10V60W,LVQ
Description:
MOSFET N-CH 600V 9.7A 5DFN
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Buy TK10V60W,LVQ

Attributes

NAMETYPE
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureSuper Junction
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C9.7A (Ta)
Rds On (Max) @ Id, Vgs380 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id3.7V @ 500µA
Gate Charge (Qg) @ Vgs20nC @ 10V
Input Capacitance (Ciss) @ Vds700pF @ 300V
Power - Max88.3W
Mounting TypeSurface Mount
Package / Case4-VSFN Exposed Pad
Supplier Device Package5-DFN (8x8)
TagsTK10 TK1

Package

Part NumberDescription
TK10V60W,LVQMOSFET N-CH 600V 9.7A 5DFN
TK10V60W,LVQMOSFET N-CH 600V 9.7A 5DFN

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