SIHW47N65E-GE3 - Vishay/Siliconix

Mfr. #:
SIHW47N65E-GE3
Description:
MOSFET N-CH 650V 47A TO-247AD
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Documents

NAMETYPE
DatasheetsSIHW47N65E-GE3
Video FileMOSFET Technologies for Power Conversion
PCN Assembly/OriginSIL-079-2014-Rev-0 26/Sep/2014

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
Series-
PackagingTube
Part StatusActive
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Rds On (Max) @ Id, Vgs72 mOhm @ 24A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs273nC @ 10V
Input Capacitance (Ciss) @ Vds5682pF @ 100V
Power - Max417W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD

Resources

NAMETYPE
Standard Package500
TagsSIHW4 SIHW SIH

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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