SI5463EDC-T1-GE3 - Vishay/Siliconix

Mfr. #:
SI5463EDC-T1-GE3
Description:
MOSFET P-CH 20V 3.8A 1206-8
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Documents

NAMETYPE
DatasheetsSI5463EDC
Video FileMOSFET Technologies for Power Conversion

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerVishay Siliconix
Series-
PackagingTape & Reel (TR)
Part StatusObsolete
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.8A (Ta)
Rds On (Max) @ Id, Vgs62 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) @ Vgs15nC @ 4.5V
Input Capacitance (Ciss) @ Vds-
Power - Max1.25W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

Resources

NAMETYPE
Standard Package3,000
TagsSI5463 SI546 SI54 SI5

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