FETs - Single

IPD320N20N3 G - Infineon Technologies

Infineon Technologies
IPDIPD3
Mfr. #:
IPD320N20N3 G
Description:
MOSFET N-CH 200V 34A TO252-3
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Buy IPD320N20N3 G

Attributes

NAMETYPE
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs32 mOhm @ 34A, 10V
Vgs(th) (Max) @ Id4V @ 90µA
Gate Charge (Qg) @ Vgs29nC @ 10V
Input Capacitance (Ciss) @ Vds2350pF @ 100V
Power - Max136W
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3
TagsIPD3 IPD

Interested

Part NumberDescription
FDD390N15AMOSFET N-CH 150V 26A DPAK
IPP320N20N3 GMOSFET N-CH 200V 34A TO220-3

Package

Part NumberDescription
IPD320N20N3 GMOSFET N-CH 200V 34A TO252-3
IPD320N20N3 GMOSFET N-CH 200V 34A TO252-3

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