GP1M006A065F - Global Power Technologies Group

Mfr. #:
GP1M006A065F
Description:
MOSFET N-CH 650V 5.5A TO220F
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Delivery
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Documents

NAMETYPE
DatasheetsGP1M006A065(F)H

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerGlobal Power Technologies Group
Series-
PackagingTape & Reel (TR)
Part StatusActive
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Rds On (Max) @ Id, Vgs1.6 Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs17nC @ 10V
Input Capacitance (Ciss) @ Vds1177pF @ 25V
Power - Max39W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220F

Resources

NAMETYPE
Standard Package2,000
TagsGP1M006A065F GP1M006A06 GP1M006 GP1M00 GP1M GP1

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (Package Tracking) (It may take up to 24 hours before carriers display the info.)

Payment

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  • If you need the detailed invoice or tax ID, please email us.